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PD - 9.1109
IRGPC20KD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Short circuit rated -10s @125C, VGE = 15V * Switching-loss rating includes all "tail" losses * HEXFREDTM soft ultrafast diodes * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated UltraFast CoPack IGBT
VCES = 600V VCE(sat) 3.5V
G
@VGE = 15V, IC = 6.0A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C I CM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Foward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
TO -2 4 7 AC
Max.
600 10 6.0 20 20 7.0 20 10 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-------------------------
Typ.
----------0.24 ----6 (0.21)
Max.
2.1 3.5 -----40 ------
Units
C/W
g (oz)
IRGPC20KD2
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES /T J Temperature Coeff. of Breakdown Voltage---Collector-to-Emitter Saturation Voltage ---VCE(on) ------VGE(th) Gate Threshold Voltage 3.0 V GE(th)/TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance 1.9 gfe Zero Gate Voltage Collector Current ---ICES ---V FM Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ---IGES V(BR)CES Typ. ---0.37 2.4 3.6 2.9 ----11 3.3 ------1.4 1.3 ---Max. Units Conditions ---V VGE = 0V, IC = 250A ---- V/C VGE = 0V, IC = 1.0mA 3.5 IC = 6.0A VGE = 15V See Fig. 2, 5 ---V IC = 10A ---IC = 6.0A, TJ = 150C 5.5 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 6.0A 250 A VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Max. Units Conditions 26 IC = 6.0A 6.8 nC VCC = 400V 11 See Fig. 8 ---TJ = 25C ---ns IC = 6.0A, VCC = 480V 210 VGE = 15V, RG = 50 120 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 0.90 ---s VCC = 360V, TJ = 125C VGE = 15V, RG = 50, VCPK < 500V Turn-On Delay Time ---52 ---TJ = 150C, See Fig. 9, 10, 11, 18 t d(on) Rise Time ---35 ---ns IC = 6.0A, VCC = 480V tr t d(off) Turn-Off Delay Time ---- 170 ---VGE = 15V, RG = 50 Fall Time ---- 170 ---Energy losses include "tail" and tf Total Switching Loss ---- 0.65 ---mJ diode reverse recovery. Ets Internal Emitter Inductance ---13 ---nH Measured 5mm from package LE Input Capacitance ---- 350 ---VGE = 0V Cies Coes Output Capacitance ---45 ---pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance ---- 4.7 --- = 1.0MHz Cres Diode Reverse Recovery Time ---37 55 ns TJ = 25C See Fig. t rr ---55 90 TJ = 125C 14 IF = 8.0A Diode Peak Reverse Recovery Current ---- 3.5 5.0 A TJ = 25C See Fig. Irr ---- 4.5 8.0 TJ = 125C 15 VR = 200V Diode Reverse Recovery Charge ---65 138 nC TJ = 25C See Fig. Q rr ---- 124 360 TJ = 125C 16 di/dt = 200A/ 240 s di(rec)M/dtDiode Peak Rate of Fall of Recovery ------A/s TJ = 25C See Fig. During t b ---210 Notes: ---TJ = 125C =80%(V CES), VGE=20V, L=10H, Pulse width 5.0s, VCC 17 single shot. RG = 50, ( See fig. 19 ) Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Pulse width 80s; duty factor 0.1%. Qg Qge Q gc t d(on) tr t d(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Min. ------------------------------10 Typ. 17 4.3 6.4 59 38 110 80 0.28 0.15 0.43 ----
IRGPC20KD2
8
Duty cycle: 50% TJ = 125C Ts ink = 90C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 15W 60 % of rated voltage
LOAD CURRENT (A)
6
4
2
0 0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
TJ = 25C
10
TJ = 150C
IC , Collector-to-Emitter Current (A)
10
TJ = 150C
1
TJ = 25C
0.1 0.1
VGE = 15V 20s PULSE WIDTH
1 10
1 5 10
VCC = 100V 5s PULSE WIDTH
15 20
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRGPC20KD2
10
8
VCE , Collector-to-Emitter Voltage (V)
VGE = 15V
5.0
Maximum DC Collector Current (A)
VGE = 15V 80s PULSE WIDTH
4.0
IC = 12A
6
3.0
4
IC = 6.0A
2.0
2
I C = 3.0A
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80
100 120 140 160
T C , Case Temperature (C)
TC , Case Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
P DM
0.1
0.02 0.01
t
SINGLE PULSE (THERMAL RESPONSE)
Notes: 1. Duty factor D = t 1 /t 2
1 t2
0.01 0.00001
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
IRGPC20KD2
700
600
C, Capacitance (pF)
500
Cies C oes
400
300
VGE , Gate-to-Emitter Voltage (V)
100
V GE = 0V, f = 1MHz Cies = Cge + C gc , Cce SHORTED Cres = C gc Coes = Cce + C gc
20
VCE = 480V I C = 6.0A
16
12
8
200
Cres
100
4
0 1 10
0 0 4 8 12 16 20
V CE , Collector-to-Emitter Voltage (V)
Q g , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.480
0.475
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC VGE TC IC
= 480V = 15V = 25C = 6.0A
10
RG = 50 V GE = 15V V CC = 480V
0.470
I C = 12A
0.465
1
IC = 6.0A
0.460
I C = 3.0A
0.455
0.450 20 25 30 35 40 45 50 55
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
R G , Gate Resistance ( )
W
TC, Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
IRGPC20KD2
2.0
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG = 50 T C = 150C V CC = 480V 1.6 V GE = 15V
100
VGE = 20V GE TJ = 125C
10
SAFE OPERATING AREA
1.2
0.8
1
0.4
0.0 0 3 6 9 12 15
0.1 1 10 100 1000
I C , Collector-to-Emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - IF (A)
10
TJ = 150C TJ = 125C TJ = 25C
1
0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRGPC20KD2
100 100
VR = 200V TJ = 125C TJ = 25C
80
VR = 200V TJ = 125C TJ = 25C
IF = 16A
t rr - (ns)
60
IF = 8.0A
I IRRM - (A)
I F = 16A
10
40
IF = 8.0A I F = 4.0A
I F = 4.0A
20
0 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif /dt
500
10000
VR = 200V TJ = 125C TJ = 25C
400
VR = 200V TJ = 125C TJ = 25C
300
di(rec)M/dt - (A/s)
- (nC)
I F = 16A
200
IF = 4.0A
1000
RR
Q
IF = 8.0A I F = 16A
I F = 8.0A
100
IF = 4.0A
0 100 100 100
di f /dt - (A/s)
1000
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M /dt vs. dif/dt
IRGPC20KD2
90% Vge +Vge
Same type device as D.U.T.
Vce
Ic 80% of Vce 430F D.U.T.
10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
t1+5S Vce ic dt t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
td(on)
tr
5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
DIODE RECOVERY WAVEFORMS
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
IRGPC20KD2
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
L 1000V 50V 6000F 100V Vc*
D.U.T.
R L= 0 - 480V
480V 4 X IC @25C
Fig. 19 - Clamped Inductive Load Test Circuit
15.90 (.626) 15.30 (.602) - B3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 - C- D-
Fig. 20 - Pulsed Collector Current Test Circuit
5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4
NOTES: 1 DIMENSIONS & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOWN MILLIMETERS (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-247AC.
2X
5.50 (.217) 4.50 (.177)
LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTOR 3 - EMITTER 4 - COLLECTOR
* 14.20 (.559)
2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
14.80 (.583)
4.30 (.170) 3.70 (.145)
3X
1.40 (.056) 1.00 (.039) 0.25 (.010) M
3X CAS
3.40 (.133) 3.00 (.118)
0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087)
* LO G RLE D D(2 m N E A E 0m ) V R IO A A B (T -2 D E S N V ILA LE O 47A ) T O D RA D"-E S F IX O R E D " UF T P R N ME O A T U BR
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)

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